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Defects responsible for abnormal n-type conductivity in Ag-excess doped PbTe thermoelectrics

机译:掺杂ag过量导致异常n型导电性的缺陷   pbTe热电材料

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摘要

We find that Ag-interstitial ($Ag_I$) acts as an electron donor and plays animportant role in Ag-excess doped polycrystalline PbTe thermoelectricmaterials. When Ag is heavily doped in PbTe, the neutral (Ag-Ag) dimer defectis formed at the Pb-site and the environment becomes Pb-rich/Te-poor condition.Then the positively ionized Ag interstitial ($Ag_I^+$) defect becomes the majordefect under Pb-rich condition. Due to the small formation energy and smalldiffusion barrier of $Ag_I^+$, Ag can be easily dissolved into the PbTe matrix.The temperature behavior of the Ag defect formation energy well explains the$Ag_I^+$ solubility, the electron carrier generation, and the increasingelectrical conductivity in Ag-excess doped polycrystalline PbTe at hightemperature. This abnormal doping behavior by forming interstitial defects isalso found for Au-doped PbTe.
机译:我们发现,间隙银($ Ag_I $)充当电子供体,并在过量掺杂银的多晶PbTe热电材料中起重要作用。当Ag重掺杂在PbTe中时,中性(Ag-Ag)二聚体缺陷会在Pb处形成,环境变成Pb富集/ Te贫乏的状态,然后是正离子化的Ag间隙($ Ag_I ^ + $)缺陷。在富铅条件下成为主要缺陷。由于$ Ag_I ^ + $的形成能小且扩散障碍小,Ag​​可以很容易地溶解到PbTe基体中.Ag缺陷形成能的温度行为很好地解释了$ Ag_I ^ + $的溶解度,电子载流子的产生,过量掺杂Ag的多晶PbTe在高温下的电导率增加。对于金掺杂的PbTe,还发现了通过形成间隙缺陷而引起的这种异常掺杂行为。

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